Scalable Creation of Deep Silicon‐Vacancy Color Centers in Diamond by Ion Implantation through a 1‐μm Pinhole

The controlled creation of quantum emitters in diamond represents a major research effort the fabrication single-photon devices. Here, we present scalable production silicon-vacancy (SiV) color centers single-crystal by ion implantation. lateral position SiV is spatially 1-$\mu$m pinhole placed front sample, which can be moved nanometer precise using piezo stage. initial implantation monitoring beam with camera. Hereby, silicon ions are implanted at desired spots an area comparable to diffraction limit. We discuss role scattered and activation yield for single emitters.